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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3690 description low collector saturation voltage : v ce(sat) = 0.5v(max)@ i c = 3a collector-emitter sustaining voltage- : v ceo(sus) = 60v (min) high switching speed applications designed for high speed and power switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i cm collector current-peak 6 a i b b base current-continuous 1.5 a collector power dissipation @ t c =25 15 p c collector power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3690 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 2a; i b = 0.2a, l= 1mh b 60 v v ce(sat)-1 collector-emitter saturation voltage i c = 2a; i b = 0.1a b 0.3 v v ce(sat) -2 collector-emitter saturation voltage i c = 3a; i b = 0.15a b 0.5 v v be(sat) -1 base-emitter saturation voltage i c = 2a; i b = 0.1a b 1.2 v v be(sat) -2 base-emitter saturation voltage i c = 3a; i b = 0.15a b 1.5 v i cbo collector cutoff current v cb = 60v; i e = 0 10 a i cex collector cutoff current v ce = 60v; v be = -1.5v t a =125 10 1.0 a ma i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 0.3a ; v ce = 2v 100 h fe-2 dc current gain i c = 0.6a ; v ce = 2v 100 200 400 h fe-3 dc current gain i c = 2a ; v ce = 2v 60 ? h fe- 2 classifications m l k 100-200 150-300 200-400 isc website www.iscsemi.cn 2 |
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